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| VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1200 Die size: 13.5 x 13.5 mm Doc. No. 5SYA1639-01 Sep 06 * Ultra low loss thin IGBT die * Highly rugged SPT+ design * Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Limited by Tvjmax VGE = 0 V, Tvj 25 C min max 1200 150 300 Unit V A A V s C -20 20 10 -40 150 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMY 12M1200 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 150 A, RG = 6.8 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 150 A, RG = 6.8 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 150 A, VGE = 15 V, RG = 6.8 , L = 60 nH, inductive load, FWD: 2x 5SLX 12F1200 VCC = 600 V, IC = 150 A, VGE = 15 V, RG = 6.8 , L = 60 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C VGE = 0 V, IC = 1 mA, Tvj = 25 C IC = 150 A, VGE = 15 V VCE = 1200 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1200 typ max Unit V 1.9 2.1 100 600 -200 5 6.2 1530 10.6 0.71 0.47 2 190 220 60 60 460 530 55 75 11.2 200 7 V V A A nA V nC nF ns ns ns ns VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 6 mA, VCE = VGE, Tvj = 25 C IC = 150 A, VCE = 600 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Turn-on switching energy Eon mJ 16.7 9.8 mJ 15.3 650 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1639-01 Sep 06 page 2 of 5 5SMY 12M1200 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 13.5 x 13.5 12.0 x 12.0 1.47 x 1.47 130 20 AlSi1 Al / Ti / Ni / Ag 4 1.2 mm mm mm m m m LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing 1.58 1.47 0.05 G 13.47 0.05 1.47 0.05 1.57 12.31 11.96 Emitter 11.97 12.33 13.49 0.05 Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1639-01 Sep 06 page 3 of 5 5SMY 12M1200 300 450 VCE = 20 V 400 250 350 25 C 200 125 C 150 300 250 200 100 150 100 50 50 VGE = 15 V 0 0 1 2 VCE [V] 3 4 0 0 2 4 6 8 10 12 14 VGE [V] 25 C 125 C IC [A] Fig. 1 Typical on-state characteristics Fig. 2 IC [A] Typical transfer characteristics 160 140 120 100 80 Eon 60 VCC = 600 V RG = 6.8 ohm VGE = 15 V Tvj = 125 C L = 60 nH Eon, Eoff [mJ] 70 VCC = 600 V IC = 150 A VGE = 15 V Tvj = 125 C L = 60 nH Eon 40 60 50 Eon, Eoff [mJ] 30 20 40 Eoff 20 Esw [mJ] = 8.2 x E-4 x I C2 + 2.65 x E-2 x IC + 7.33 Eoff 10 0 0 100 200 IC [A] 300 400 500 0 0 10 20 30 40 50 RG [ohm] Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1639-01 Sep 06 page 4 of 5 5SMY 12M1200 20 100 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 600 V 15 VCC = 900 V VGE [V] 10 Cies 10 C [nF] Coes 1 5 Cres IC = 150 A Tvj = 25 C 0 0.0 0.2 0.4 0.6 0.8 Qg [C] 1.0 1.2 1.4 0.1 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1639-01 Sep 06 |
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